Pressure-induced structural changes and insulator-metal transition in layered bismuth triiodide, BiI₃: a combined experimental and theoretical study

Abstract

Noting that BiI₃ and the well-known Topological Insulator (TI) Bi₂Se₃ have the same high symmetry parent structures and that it is desirable to find a wide-band gap TI, we determine here the effects of pressure on the structure, phonons and electronic properties of rhombohedral BiI₃. We report a pressure-induced insulator-metal transition near 1.5 GPa, using high pressure electrical resistivity and Raman measurements. X-ray diffraction studies, as a function of pressure, reveal a structural peculiarity of the BiI3 crystal, with a drastic drop in c/a ratio at 1.5 GPa and a structural phase transition from rhombohedral to monoclinic structure at 8.8 GPa. Interestingly, the metallic phase, at relatively low pressures, exhibits minimal resistivity at low temperatures, similar to that in Bi₂Se₃. We corroborate these findings with first-principles calculations and suggest that the drop in the resistivity of BiI₃ in the 1–3 GPa range of pressure arises possibly from the appearance of an intermediate crystal phase with a lower band-gap and hexagonal crystal structure. Calculated Born effective charges reveal the presence of metallic states in the structural vicinity of rhombohedral BiI₃. Changes in the topology of the electronic bands of BiI3 with pressure, and a sharp decrease in the c/a ratio below 2 GPa, are shown to give rise to changes in the slope of phonon frequencies near that pressure.