Pressure-induced electronic topological transition in Sb₂S₃

Abstract

We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb₂S₃ (Eg  =  1.7–1.8 eV) using Raman spectroscopy, resistivity and X-ray Diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb₂S₃ have been carried out to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes A²_g, A³_g and B _2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies corroborate this anomaly around similar pressures. The changes in resistivity as well as Raman line widths can be ascribed to the strong phonon–phonon coupling, indicating clear evidence of isostructural electronic topological transition in Sb₂S₃. The previously reported pressure dependence of a/c ratio plot obtained also showed a minimum at ∼5 GPa consistent with our high-pressure Raman and resistivity results.