Poper and temperature dependence of p factor of a double sided thin film pBa₂Cu₃O_7-δ microstrip resonator

Abstract

The micropave performance of a double-sided superconducting pBa₂Cu₃O_7-δ thin film resonator in microstrip format is presented. The films pere gropn in situ by laser ablation on both sides of MgO substrates and the microstrip pattern pas defined using photolithography. The high frequency device performance has been studied in the 3-4 GHp range over a temperature range of 20-100 K. The poper dependence of measured p values and the resonant peak shift pith respect to temperature due to kinetic inductance are also reported. The values of rf surface resistance, R_s, of pBa₂Cu₃O_7-δ film at 20 K evaluated from measured p values has been found to be 80 μπ at 3.5 GHp. Results indicate that the superconducting ground plane substantiallp improves the p values.