Kumar, Dhananjay ; Sharon, M. ; Pinto, R. ; Apte, P. R. ; Pai, S. P. ; Purandare, S. C. ; Gupta, L. C. ; Vijayaraghavan, R. (1993) Large critical currents and improved epitaxy of laser ablated Ag-doped YBa2Cu3O7-δ thin films Applied Physics Letters, 62 (26). pp. 3522-3524. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v62/i26/p3522...
Related URL: http://dx.doi.org/10.1063/1.109014
Abstract
Microstructure and critical current densities of laser ablated YBa2Cu3O7-δ thin films doped with 2-20 wt. % Ag have been studied. A critical current density as high as 1.4 × 107 A cm-2 at 77 K has been realized on <100> SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 11281 |
| Deposited On: | 09 Nov 2010 03:39 |
| Last Modified: | 02 Jun 2011 06:18 |
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