Dongaonkar, Sourabh ; Karthik, Y. ; Mahapatra, Souvik ; Alam, Muhammad A. (2011) A physical model for non-ohmic shunt conduction and metastability in amorphous silicon p-i-n solar cells In: 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19-24 June ,2011, Seattle, WA, USA.
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Official URL: http://ieeexplore.ieee.org/document/6186664/
Related URL: http://dx.doi.org/10.1109/PVSC.2011.6186664
Abstract
We present a physical model of non-ohmic shunt current in a-Si:H p-i-n solar cells, and validate it with detailed measurements. This model is based on Space-charge-limited (SCL) transport through localized p-i-p shunt paths, which can arise from contact metal incorporation in a-Si:H layer. This model explains both the electrical characteristics and the metastable switching behavior of the shunts within an integrated framework. We first verify the SCL model using simulations and statistically robust measurements, and then use this picture to analyze our systematic observations of non-volatile switching in these shunts. Our work not only resolves broad experimental observations on shunt behavior, but also suggests possible techniques for alleviating shunt induced performance and reliability issues.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112730 |
| Deposited On: | 12 Apr 2018 08:03 |
| Last Modified: | 12 Apr 2018 08:03 |
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