Dongaonkar, Sourabh ; Y., Karthik ; Wang, Dapeng ; Frei, Michel ; Mahapatra, Souvik ; Alam, Muhammad A. (2010) On the nature of shunt leakage in amorphous silicon p-i-n solar cells IEEE Electron Device Letters, 31 (11). pp. 1266-1268. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/document/5565387/
Related URL: http://dx.doi.org/10.1109/LED.2010.2064754
Abstract
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si:H p-i-n solar cells and show that it is characterized by following universal features: (1) voltage symmetry; (2) power-law voltage dependence; and (3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured “shunt-contaminated” forward dark IV. We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental observations from literature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Space-Charge-Limited (SCL) Current; Amorphous Silicon Solar; Dark Current; Shunt Leakage |
| ID Code: | 112726 |
| Deposited On: | 09 Apr 2018 11:21 |
| Last Modified: | 09 Apr 2018 11:21 |
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