Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2000) Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs In: 2000 Technical Digest International Electron Devices Meeting, IEDM '00, 10-13 Dec, 2000, San Francisco, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/904409/
Related URL: http://dx.doi.org/10.1109/IEDM.2000.904409
Abstract
Impact ionization in n-channel MOSFETs for drain voltages (VD) below the bandgap voltages (qVD).
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112719 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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