Anil, K G. ; Mahapatra, S. ; Eisele, I. (2003) A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages Solid State Electronics, 47 (6). pp. 995-1001. ISSN 0038-1101
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Official URL: https://www.sciencedirect.com/science/article/pii/...
Related URL: http://dx.doi.org/10.1016/S0038-1101(02)00458-6
Abstract
A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors (n-MOSFET) for drain voltages close to and below the bandgap voltage is presented. The data is analyzed based on recent full-band Monte-Carlo results available in the literature. It is shown that the broadening of the tail of the Electron Energy Distribution (EED) by Electron–Electron Interactions (EEI) has an observable impact on hot-electron effects of n-MOSFETs of gate length of even 5 μm. Impacts of channel length scaling and gate voltage on the broadening of EED tail by EEI are also examined and a model to explain the observed dependencies has been proposed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Silicon; MOSFET; Hot-Carrier; Impact Ionization; Monte-Carlo Simulation; Electron Energy Distribution; Thermal Tail; Electron–Electron Interactions |
| ID Code: | 112712 |
| Deposited On: | 09 Apr 2018 10:49 |
| Last Modified: | 09 Apr 2018 10:49 |
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