Nair, D. R. ; Shukuri, S. ; Mahapatra, S. (2004) Cycling endurance of NOR flash EEPROM cells under CHISEL programming operation—impact of technological parameters and scaling IEEE Transactions on Electron Devices, 51 (10). pp. 1672-1678. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/1337180/
Related URL: http://dx.doi.org/10.1109/TED.2004.835996
Abstract
The impact of technological parameter (channel doping, source/drain junction depth) variation and channel length scaling on the reliability of NOR flash EEPROM cells under Channel Initiated Secondary Electron (CHISEL) programming is studied. The best technology for CHISEL operation has been identified by using a number of performance metrics (cycling endurance of program/erase time, program/disturb margin) and scaling studies were done on this technology. It is explicitly shown that from a reliability perspective, bitcell optimization for CHISEL operation is quite different from that for Channel Hot Electron (CHE) operation. Properly optimized bitcells show reliable CHISEL programming for floating gate length down to 0.2 μm.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| ID Code: | 112667 |
| Deposited On: | 06 Apr 2018 05:43 |
| Last Modified: | 06 Apr 2018 05:43 |
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