Bharath Kumar, P. ; Murakami, E. ; Kamohara, S. ; Mahapatra, S. (2006) Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase In: 2006 44th Annual IEEE International Reliability Physics Symposium Proceedings, 26-30 March, 2006, San Jose, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/4017272/
Related URL: http://dx.doi.org/10.1109/RELPHY.2006.251331
Abstract
Endurance and retention of SONOS EEPROMs operated using Channel Hot Electron Injection (CHEI) and Band-to-band Tunneling (BTBT) induced Hot Hole Injection (HHI) are studied. Cycling window closure is improved by optimizing erase bias and its effect on cell degradation is studied. The retention loss in program state is studied under different erase conditions and correlated to cell degradation caused by HHI.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112658 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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