Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Mahapatra, Souvik (2009) Dual layer Pt metal nanocrystal flash for multi-level-cell NAND applicationn In: 2009 IEEE International Memory Workshop, IMW '09, 10-14 May. 2009, Monterey, CA, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/5090587/
Related URL: http://dx.doi.org/10.1109/IMW.2009.5090587
Abstract
Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 104 cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112620 |
| Deposited On: | 12 Apr 2018 08:04 |
| Last Modified: | 12 Apr 2018 08:04 |
Repository Staff Only: item control page
