Mahapatra, S. ; Alam, M. A. ; Bharath Kumar, P. ; Dalei, T. R. ; Saha, D. (2004) Mechanism of negative bias temperature instability in CMOS devices degradation, recovery and impact of nitrogen In: 2004 IEEE International Electron Devices Meeting, IEDM Technical Digest, 13-15 Dec, 2004, San Francisco, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/1419079/
Related URL: http://dx.doi.org/10.1109/IEDM.2004.1419079
Abstract
NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112613 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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