Varghese, D. ; Saha, D. ; Mahapatra, S. ; Ahmed, K. ; Nouri, F. ; Alam, M. (2005) On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory and implications In: 2005 IEEE International Electron Devices Meeting, IEDM Technical Digest, 5-5 Dec, 2005, Washington, DC, USA.
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Official URL: http://ieeexplore.ieee.org/document/1609444/
Related URL: http://dx.doi.org/10.1109/IEDM.2005.1609444
Abstract
Negative Bias Temperature Instability (NBTI) is studied in p-MOSFETs having Decoupled Plasma Nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Å). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112612 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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