Islam, A. E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A. T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M. A. (2006) Gate leakage vs. NBTI in plasma nitrided oxides: characterization, physical principles and optimization In: 2006 International Electron Devices Meeting, IEDM '06, 11-13 Dec, 2006, San Francisco, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/4154194/
Related URL: http://dx.doi.org/10.1109/IEDM.2006.346775
Abstract
Since nitrided oxides improve gate leakage at the expense of NBTI, one must optimize nitrogen concentration in oxinitride samples for reliable performance and reduced power dissipation. Here, we analyze wide range of NBTI stress data to develop a predictive model for gate leakage and first self-consistent model for field acceleration within R-D framework. This model anticipates a novel design diagram for co-optimization of leakage and NBTI for arbitrary nitrogen concentration and effective oxide thickness.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112609 |
| Deposited On: | 12 Apr 2018 08:05 |
| Last Modified: | 12 Apr 2018 08:05 |
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