Kumar, E. N. ; Maheta, V. D. ; Purawat, S. ; Islam, A. E. ; Olsen, C. ; Ahmed, K. ; Alam, M. A. ; Mahapatra, S. (2007) Material dependence of NBTI physical mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A comprehensive study by Ultra-fast On-the-fly (UF-OTF) IDLIN technique In: 2007 IEEE International Electron Devices Meeting, IEDM.
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Official URL: http://ieeexplore.ieee.org/document/4419071/
Related URL: http://dx.doi.org/10.1109/IEDM.2007.4419071
Abstract
An Ultra-fast On-the-fly (UF-OTF) IDLIN technique having 1 mus resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p- MOSFETs. The nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112608 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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