Mahapatra, S. ; Maheta, V. D. (2008) Gate insulator process dependent NBTI in SiON p-MOSFETs In: 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008, 20-23 Oct, 2008, Beijing, China.
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Official URL: http://ieeexplore.ieee.org/document/4734620/?reloa...
Related URL: http://dx.doi.org/10.1109/ICSICT.2008.4734620
Abstract
The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112603 |
| Deposited On: | 12 Apr 2018 07:23 |
| Last Modified: | 12 Apr 2018 07:23 |
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