Mahapatra, Souvik ; Goel, Nilesh ; Joshi, Kaustubh (2012) A physics based model for NBTI in p-MOSFETs In: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China.
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Official URL: http://ieeexplore.ieee.org/document/6467688/
Related URL: http://dx.doi.org/10.1109/ICSICT.2012.6467688
Abstract
A comprehensive modeling framework is proposed to explain NBTI degradation during DC stress, recovery of degradation after DC stress and AC stress data. The framework is validated against a large body of experimental data obtained from wide variety of p-MOSFETs. Five experimental features of NBTI are identified and explained using the proposed framework.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112586 |
| Deposited On: | 11 Apr 2018 11:44 |
| Last Modified: | 11 Apr 2018 11:44 |
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