Desai, S. ; Mukhopadhyay, S. ; Goel, N. ; Nanaware, N. ; Jose, B. ; Joshi, K. ; Mahapatra, S. (2013) A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence In: 2013 IEEE International Conference on Reliability Physics Symposium (IRPS), 14-18 April, 2013, Anaheim, CA, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/6532117/
Related URL: http://dx.doi.org/10.1109/IRPS.2013.6532117
Abstract
A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | NBTI Process Dependence; NBTI; Trap Generation; RD Model; Trapping; Two Energy Well Model; 2 Stage Model; DC Stress; Recovery; AC Duty Cycle; AC Frequency |
| ID Code: | 112585 |
| Deposited On: | 11 Apr 2018 11:42 |
| Last Modified: | 11 Apr 2018 11:42 |
Repository Staff Only: item control page
