Joshi, K. ; Hung, S. ; Mukhopadhyay, S. ; Chaudhary, V. ; Nanaware, N. ; Rajamohnan, B. ; Sato, T. ; Bevan, M. ; Wei, A. ; Noori, A. ; McDougal, B. ; Ni, C. ; Saheli, G. ; Lazik, C. ; Liu, P. ; Chu, D. ; Date, L. ; Datta, S. ; Brand, A. ; Swenberg, J. ; Mahapatra, S. (2013) HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation In: 2013 IEEE International Conference on Reliability Physics Symposium (IRPS), 14-18 April, 2013, Anaheim, CA, USA.
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Official URL: https://ieeexplore.ieee.org/document/6532014/
Related URL: http://dx.doi.org/10.1109/IRPS.2013.6532014
Abstract
NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to ∼ 6Å and fabricated using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT, proposed stacks provide improved NBTI and similar PBTI when compared to conventional Chem-Ox IL based HKMG stacks. EOT scaling achieved by RTP thermal IL scaling shows lower rate of increase in NBTI and PBTI when compared to Chem-Ox IL scavenged stacks. Impact of Nitrogen and role of post HK nitridation are studied. Physical mechanism of improved BTI in proposed stacks is discussed in detail.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Charge Trapping; HKMG; Chem-Ox IL; Thermal IL; EOT Scaling; IL Scaling; Gate Leakage; Mobility; NBTI; PBTI; Flicker Noise; DCIV; SILC; Trap Generation |
| ID Code: | 112584 |
| Deposited On: | 11 Apr 2018 11:39 |
| Last Modified: | 11 Apr 2018 11:39 |
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