Chaudhary, A. ; Kaczer, B. ; Roussel, P. J. ; Chiarella, T. ; Horiguchi, N. ; Mahapatra, S. (2015) Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/7112705/
Related URL: http://dx.doi.org/10.1109/IRPS.2015.7112705
Abstract
Effect of mobility variation (Δμeff) during NBTI stress is well documented for larger area devices. In this paper, the effect of Δμeff on the statistics of NBTI degradation for small area devices is explored. Statistically relevant number of high-κ last Replacement Metal Gate p-FinFETs are characterized for NBTI stress to cover a range of three standard deviations for threshold voltage degradation (ΔVT). It is shown that Δμeff can results into erroneous mean (μ) and sigma (σ) VT shifts governing stochastic NBTI. The amount of error induced is found to depend on sense voltage (|VMEAS|). Further, correlation of ΔVT to VT0 is analyzed with VT0 estimated employing two different methods.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Replacement Metal Gate (RMG); Negative Bias Temperature Instability (NBTI); p-MOSFETs; Mobility Variation (Δμeff); SPICE; FinFETs |
| ID Code: | 112568 |
| Deposited On: | 11 Apr 2018 11:03 |
| Last Modified: | 11 Apr 2018 11:03 |
Repository Staff Only: item control page
