Mahapatra, Souvik ; Parihar, Narendra ; Mishra, Subrat ; Fernandez, Beryl ; Chaudhary, Ankush (2017) A BTI Analysis Tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions In: 2017 IEEE Conference on Electron Devices Technology and Manufacturing Conference (EDTM), 28 Feb.-2 March 2017, Toyama, Japan.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/7947531/
Related URL: http://dx.doi.org/10.1109/EDTM.2017.7947531
Abstract
A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It can simulate temporal kinetics of threshold voltage shift (ΔVt) during and after DC and AC stress and mixed DC-AC stress for dynamic voltage, frequency and activity conditions. It can predict gate insulator process dependence and is consistent with large and small area devices. The framework is included in a commercial TCAD software to simulate degradation of FinFETs and GAA NWFETs.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | NBTI; Reaction-diffusion (RD) Model; Trap Generation; Hole Trapping; TCAD |
| ID Code: | 112564 |
| Deposited On: | 11 Apr 2018 10:53 |
| Last Modified: | 11 Apr 2018 10:53 |
Repository Staff Only: item control page
