Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Krishna, Nety ; Mahapatra, Souvik (2008) Metal nanocrystal memory with pt single- and dual-layer NC with low-leakage Al2O3 blocking dielectric IEEE Electron Device Letters, 29 (12). pp. 1389-1391. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/abstract/document/46711...
Related URL: http://dx.doi.org/10.1109/LED.2008.2007308
Abstract
In this letter, we report metal Nanocrystal (NC)-based flash memory devices with Single-layer (SL) and Dual-layer (DL) Pt NCs as the storage element. The devices are fabricated using CMOS compatible process flow with optimized low-leakage high-k Al2O3 as the control dielectric. Large memory window (10 V for SL and 15 V for DL devices) is observed due to overerase, which increases the overall window. Improvement in DL memory window is found to be due to 1.5 times improvement in total stored charge over SL. Excellent high-temperature precycling retention is observed both for SL and DL devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Metal Nanocrystal (NC); Dual Layer (DL); Flash Memory |
| ID Code: | 112548 |
| Deposited On: | 02 Apr 2018 09:22 |
| Last Modified: | 02 Apr 2018 09:22 |
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