Lwin, Z. Z. ; Pey, K. L. ; Liu, C. ; Liu, Q. ; Zhang, Q. ; Chen, Y. N. ; Singh, P. K. ; Mahapatra, S. (2011) Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack Applied Physics Letters, 99 (22). Article ID 222102. ISSN 0003-6951
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Official URL: http://aip.scitation.org/doi/abs/10.1063/1.3664220
Related URL: http://dx.doi.org/10.1063/1.3664220
Abstract
In this work, we demonstrate a two-step analysis procedure that enables an in-depth understanding of the localized charge trapping and chargedecay mechanisms in metal nanocrystal (MNC)-embedded high-κ/SiO2 gate stacks. The results clearly reveal that vertical charge loss and lateral charge diffusion are two competing mechanisms and they can be identified by discharging current measurements at elevated temperatures and the Kelvin force microscopy characterization. It is found that the MNC with higher work function has a lower inter-dot charge tunneling probability, which is favorable for improved retention in memory applications. However, the vertical charge loss during the initial decay period is a trade-off and it could be minimized by using a dual-layer MNC structure.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 112537 |
| Deposited On: | 02 Apr 2018 08:41 |
| Last Modified: | 02 Apr 2018 08:41 |
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