Alam, M. A. ; Kufluoglu, H. ; Varghese, D. ; Mahapatra, S. (2007) A comprehensive model for PMOS NBTI degradation: Recent progress Microelectronics Reliability, 47 (6). pp. 853-862. ISSN 0026-2714
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Official URL: https://www.sciencedirect.com/science/article/pii/...
Related URL: http://dx.doi.org/10.1016/j.microrel.2006.10.012
Abstract
Negative Bias Temperature Instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBTI degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction–Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 112508 |
| Deposited On: | 02 Apr 2018 08:13 |
| Last Modified: | 02 Apr 2018 08:13 |
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