Deora, Shweta ; Maheta, Vrajesh Dineshchandra ; Bersuker, Gennadi ; Olsen, Christopher ; Ahmed, Khaled Z. ; Jammy, Raj ; Mahapatra, Souvik (2009) A comparative NBTI study of HfO2, HfSiOx and SiON p-MOSFETs using UF-OTF IDLIN technique IEEE Electron Device Letters, 30 (2). pp. 152-154. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/document/4711117/
Related URL: http://dx.doi.org/10.1109/LED.2008.2009235
Abstract
The time, temperature and oxide-field dependence of negative-bias temperature instability is studied in HfO2/TiN, HfSiOx/TiN and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly IDLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to Rapid Thermal Nitrided Oxide (RTNO) SiON, HfO2 devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for Plasma Nitrided Oxide (PNO) SiON and HfSiOx devices. HfSiOx shows lower overall degradation, higher long-time power-law exponent, field acceleration and temperature activation as compared to HfO2, which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiOx and HfO2 can be attributed to differences in N density in the SiO2 IL of these devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Time Exponent; Activation Energy; Field Acceleration; High-k Dielectric; Hole Trapping; Interface Traps; Negative-bias Temperature Instability (NBTI); Plasma Oxynitride; P-MOSFET; Thermal Oxynitride |
| ID Code: | 112498 |
| Deposited On: | 02 Apr 2018 07:52 |
| Last Modified: | 02 Apr 2018 07:52 |
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