Chaudhary, Ankush ; Mahapatra, Souvik (2013) A physical and SPICE mobility degradation analysis for NBTI IEEE Transactions on Electron Devices, 60 (7). pp. 2096-2103. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/6522513/
Related URL: http://dx.doi.org/10.1109/TED.2013.2259493
Abstract
The importance of mobility degradation (Δμeff) due to Negative Bias Temperature Instability (NBTI) stress is studied for precise modeling of p-MOSFET drain current degradation (ΔID). An improvement to the SPICE mobility model is presented to incorporate Δμeff and the modified model is validated against experimental ΔID and transconductance degradation (Δgm) over time, in the subthreshold to strong inversion region, across different SiON and High-k Metal Gate (HKMG) devices. To gain further insight into NBTI mobility degradation, the well-known physics-based mobility model consisting of three scattering components is revalidated across different devices. This analysis is beneficial for device and circuit simulations in Technology CAD and SPICE environments, respectively, for different process technologies.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Threshold Voltage Degradation; Mathiessen's Rule; Mobility Degradation; Negative Bias Temperature Instability (NBTI); SPICE |
| ID Code: | 112490 |
| Deposited On: | 02 Apr 2018 06:46 |
| Last Modified: | 02 Apr 2018 06:46 |
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