Goel, Nilesh ; Nanaware, Nirmal ; Mahapatra, Souvik (2013) Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs IEEE Electron Device Letters, 34 (12). pp. 1476-1478. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/abstract/document/66462...
Related URL: http://dx.doi.org/10.1109/LED.2013.2284668
Abstract
Ultrafast DC and AC Negative Bias Temperature Instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| ID Code: | 112487 |
| Deposited On: | 02 Apr 2018 06:37 |
| Last Modified: | 02 Apr 2018 06:37 |
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