Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2015) An experimental perspective of trap generation under BTI stress IEEE Transactions on Electron Devices, 62 (7). pp. 2092-2097. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/7116557/
Related URL: http://dx.doi.org/10.1109/TED.2015.2434955
Abstract
A gated-diode or direct current IV method is used to characterize Trap Generation (TG) under Negative-bias Temperature Instability (NBTI) and Positive-bias Temperature Instability (PBTI) stress in different planar high-k metal gate p-channel and n-channel MOSFETs, respectively. After correction of the measurement delay, very similar time (tSTR), voltage (VG,STR), temperature (T), AC pulse duty cycle and frequency (f) dependence of TG is seen for NBTI and PBTI. Measured TG shows power-law time dependence with a time exponent of n ∼ 0.16 for NBTI and PBTI and for DC and AC stress. Uncoupled nature of voltage acceleration (Γ) and T activation (EA) is seen. Interlayer scaling has a similar impact on EA and Γ for NBTI and PBTI. However, the physical location of TG is shown to be different for NBTI and PBTI stress.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Direct Current IV (DCIV); High-k Metal Gate (HKMG); Interlayer (IL) Scaling; Negative-bias Temperature Instability (NBTI); Positive-bias Temperature Instability (PBTI); Trap Generation (TG) |
| ID Code: | 112483 |
| Deposited On: | 02 Apr 2018 06:25 |
| Last Modified: | 02 Apr 2018 06:25 |
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