Parihar, Narendra ; Goel, Nilesh ; Chaudhary, Ankush ; Mahapatra, Souvik (2016) A modeling framework for NBTI degradation under dynamic voltage and frequency scaling IEEE Transactions on Electron Devices, 63 (3). pp. 946-953. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/7399369/
Related URL: http://dx.doi.org/10.1109/TED.2016.2519455
Abstract
A modeling framework is proposed to predict the degradation and recovery of threshold voltage shift (ΔVT) due to negative bias temperature instability. Double interface reaction-diffusion model with transient trap occupancy model is used to predict the generation and recovery of interface traps (ΔVIT). Empirical stretched exponential equations are used to capture hole trapping and detrapping in preexisting traps (ΔVHT). The framework consists of uncoupled contributions from ΔVIT and ΔVHT and is capable of accurately predicting the ultrafast measured ΔVT during DC, arbitrary multicycle DC, AC, and mixed-mode DC-AC stress. It can predict pulse duty cycle and frequency dependence of AC degradation and also dynamic voltage and frequency scaling waveforms encountered in actual circuits.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Transient Trap Occupancy Model (TTOM); Dynamic Voltage and Frequency Scaling (DVFS); High-k Metal Gate (HKMG); Negative Bias Temperature Instability (NBTI); Reaction-diffusion (RD) Model |
| ID Code: | 112482 |
| Deposited On: | 02 Apr 2018 06:24 |
| Last Modified: | 02 Apr 2018 06:24 |
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