Parihar, Narendra ; Goel, Nilesh ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2018) BTI analysis tool - Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact and EOL estimation IEEE Transactions on Electron Devices, 65 (2). pp. 392-403. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/8233406/?reloa...
Related URL: http://dx.doi.org/10.1109/TED.2017.2780083
Abstract
A comprehensive modeling framework is presented to predict the time kinetics of negative bias temperature instability stress and recovery during and after dc and ac stresses and also during mixed dc–ac stress. The model uses uncorrelated contributions from the generation of interface and bulk traps and hole trapping in preexisting bulk traps. Ultrafast measured data at different stresses and recovery biases, temperature, duty cycle and frequency, as well as arbitrary time segments with dynamically varying voltage, frequency, and activity are predicted. The role of nitrogen in the gate insulator is explained. End-of-life degradation is determined under dc and ac use conditions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Direct Current I–V (DCIV); End of Life (EOL); Hole Trapping and Detrapping; Negative Bias Temperature Instability (NBTI); Reaction–diffusion (RD) Model; Trap Generation and Passivation; Trap Occupancy; Ultra Fast-measure–stress–measure (MSM) |
| ID Code: | 112466 |
| Deposited On: | 02 Apr 2018 05:22 |
| Last Modified: | 02 Apr 2018 05:22 |
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