Thakur, Gohil S. ; Jha, Rajveer ; Haque, Zeba ; Awana, V. P. S. ; Gupta, L. C. ; Ganguli, A. K. (2015) Pressure enhanced superconductivity at 10 K in La doped EuBiS2F Superconductor Science and Technology, 28 (11). Article ID 115010. ISSN 0953-2048
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Official URL: http://iopscience.iop.org/article/10.1088/0953-204...
Related URL: http://dx.doi.org/10.1088/0953-2048/28/11/115010
Abstract
We have investigated the effect of La doping and high pressure on superconducting properties of EuBiS2F, which is a newly discovered superconducting material (Tc ~ 0.3 K) (Zhai et al (2014) Phys. Rev. B 90 064518). An enhancement of Tc to 2.2 K is observed in Eu0.5La0.5BiS2F. Upon application of pressure Tc is further enhanced up to ~10 K (P = 2.5 GPa). Eu0.5La0.5BiS2F is semiconducting down to 3 K. The onset of a superconductivity-like feature is seen at 2.2 K at ambient pressure. At a pressure above 1.38 GPa, the Tconset remains invariant at 10 K but the Tc (ρ = 0) is increased to above 8.2 K. There is a possible crystallographic transformation by application of pressure from a structure of low Tc to a structure corresponding to high Tc.
Item Type: | Article |
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Source: | Copyright of this article belongs to Institute of Physics. |
ID Code: | 111609 |
Deposited On: | 26 Sep 2017 13:11 |
Last Modified: | 26 Sep 2017 13:11 |
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