Mitra, C. ; Raychaudhuri, P. ; Köbernik, G. ; Dörr, K. ; Müller, K. H. ; Schultz, L. ; Pinto, R. (2001) p–n diode with hole- and electron-doped lanthanum manganites Applied Physics Letters, 79 (15). pp. 2408-2410. ISSN 0003-6951
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Official URL: http://aip.scitation.org/doi/abs/10.1063/1.1409592
Related URL: http://dx.doi.org/10.1063/1.1409592
Abstract
The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current–voltage (I–V) characteristics akin to a p–n diode. The observed asymmetry in the I–V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p–n diode can be constructed.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
ID Code: | 105019 |
Deposited On: | 25 Dec 2017 10:59 |
Last Modified: | 25 Dec 2017 10:59 |
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