Naik, Tejas R. ; Singh, Vibhas ; Ravikanth, M. ; Rao, V Ramgopal (2016) A vapor phase self-assembly of porphyrin monolayer as a copper diffusion barrier for back-end-of-line CMOS technologies IEEE Transactions on Electron Devices, 63 (5). pp. 2009-2015. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/7433994/
Related URL: http://dx.doi.org/10.1109/TED.2016.2537370
Abstract
We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties as a copper diffusion barrier. The ZnTPPOH VPSAMs show a 1.5× improvement over the earlier investigated 3-aminopropyltrimethoxysilane self-assembled monolayers (SAMs) in bias temperature stress (BTS) studies. We show that with the porphyrin SAMs, one can achieve an improvement in breakdown field of a low-K dielectric by two times and a drop in copper diffusion by six times as measured by secondary ion mass spectroscopy.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Copper; Temperature Measurement; Thermal Stability; CMOS Integrated Circuits; CMOS Technology; Substrates; Surface Morphology |
| ID Code: | 104954 |
| Deposited On: | 30 Nov 2017 12:17 |
| Last Modified: | 30 Nov 2017 12:17 |
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