Sinha, Godhuli ; Datta, Anuja ; Panda, Subhendu K. ; Chavan, Padmakar G. ; More, Mahendra A. ; Joag, Dilip S. ; Patra, Amitava (2009) Self-catalytic growth and field-emission properties of Ga2O3 nanowires Journal of Physics D: Applied Physics, 42 (18). Article ID 185409. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/article/10.1088/0022-372...
Related URL: http://dx.doi.org/10.1088/0022-3727/42/18/185409
Abstract
Ga2O3 nanowires with very narrow width (~30 nm) were fabricated from precursor gallium metal via a self-catalytic vapour–liquid–solid method using sol–gel derived Ga2O3 thin films as substrates. The morphological evolution of Ga2O3 nanostructures has been analysed by scanning electron microscopy and transmission electron microscopy. The field-emission (FE) properties of Ga2O3 nanowires are recorded and the turn-on field is found to be 1.88 V µm-1. It is shown from the I–t plot that the emission current remains nearly constant over 2 h at the pre-set current value of 1 µA. The average emission current at the stabilized value is seen to be fairly constant suggesting that the Ga2O3 nanowires are potentially important for applications in FE based devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 104781 |
| Deposited On: | 01 Dec 2017 11:03 |
| Last Modified: | 01 Dec 2017 11:03 |
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