Pal, Atindra Nath ; Bol, Ageeth A. ; Ghosh, Arindam (2010) Large low-frequency resistance noise in chemical vapor deposited graphene Applied Physics Letters, 97 (13). Article ID 133504. ISSN 0003-6951
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Official URL: http://scitation.aip.org/content/aip/journal/apl/9...
Related URL: http://dx.doi.org/10.1063/1.3493655
Abstract
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by Chemical Vapor Deposition (CVD) on copper foils. We find that noise in these systems to be rather large and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 101545 |
| Deposited On: | 01 Feb 2018 10:07 |
| Last Modified: | 01 Feb 2018 10:07 |
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