Shamim, Saquib ; Mahapatra, Suddhasatta ; Polley, Craig ; Simmons, Michelle Y. ; Ghosh, Arindam (2011) Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ layers Physical Review B: Condensed Matter and Materials Physics, 83 (23). Article ID 233304. ISSN 1098-0121
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Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysR...
Related URL: http://dx.doi.org/10.1103/PhysRevB.83.233304
Abstract
We report low-frequency 1/f-noise measurements of degenerately doped Si:P δ layers at 4.2 K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 101538 |
| Deposited On: | 01 Feb 2018 10:05 |
| Last Modified: | 01 Feb 2018 10:05 |
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