Evidence of gate-tunable topological excitations in two-dimensional electron systems

Koushik, R. ; Baenninger, Matthias ; Narayan, Vijay ; Mukerjee, Subroto ; Pepper, Michael ; Farrer, Ian ; Ritchie, David A. ; Ghosh, Arindam (2011) Evidence of gate-tunable topological excitations in two-dimensional electron systems Physical Review B: Condensed Matter and Materials Physics, 83 (8). Article ID 085302. ISSN 1098-0121

Full text not available from this repository.

Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysR...

Related URL: http://dx.doi.org/10.1103/PhysRevB.83.085302

Abstract

We report experimental observations of a new mechanism of charge transport in two-dimensional electron systems (2DESs) in the presence of strong Coulomb interaction and disorder. We show that at low enough temperature the conductivity tends to zero at a nonzero carrier density, which represents the point of essential singularity in a Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:101535
Deposited On:01 Feb 2018 10:05
Last Modified:01 Feb 2018 10:05

Repository Staff Only: item control page