Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

Aamir, M. A. ; Goswami, Srijit ; Baenninger, Matthias ; Tripathi, Vikram ; Pepper, Michael ; Farrer, Ian ; Ritchie, David A. ; Ghosh, Arindam (2012) Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface Physical Review B: Condensed Matter and Materials Physics, 86 (8). Article ID 081203. ISSN 1098-0121

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Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysR...

Related URL: http://dx.doi.org/10.1103/PhysRevB.86.081203

Abstract

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal Nonsaturating Linear Magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:101526
Deposited On:01 Feb 2018 10:05
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