Siddiqui, Azher M. ; Pathak, Anand P. ; Sundaravel, B. ; Das, Amal K. ; Sekar, K. ; Dev, B. N. ; Arora, B. M. (1998) Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 142 (3). pp. 387-392. ISSN 0168-583X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...
Related URL: http://dx.doi.org/10.1016/S0168-583X(98)00289-4
Abstract
Organometallic Vapor Phase Epitaxy (OMVPE) grown layered structures of In0.1Ga0.9As/GaAs have been analyzed by He++ ion backscattering and channeling. From the random spectrum, the InxGa1 - xAs layer thickness was determined to be around 300 Å and the composition of In to be In0.1 within an experimental error of around 5%. The χmin obtained from the In signal is around 7% which shows that the epilayer is of good crystallinity. The normalized yield vs. the tilt angle for the epilayer and the substrate along the off-axis (along [1 1 0] direction of the substrate) shows a shift in the minimum yield χmin dip, which is a direct measure of the strain present. This shift is found to be 0.2 ± 0.05° corresponding to a tetragonal distortion of 0.7 ± 0.2%. Shifting of the minimum yield dip of the overlayer towards left side with respect to the substrate indicates that the strain is compressive which is what is expected. X-ray diffraction is also carried out on the same sample which gives us ε ⊥=1.01% and the in-plane lattice mismatch is nearly zero.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Strained Layer Superlattices; RBS; Channeling |
ID Code: | 10139 |
Deposited On: | 02 Nov 2010 10:53 |
Last Modified: | 30 May 2011 06:01 |
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