Roy, A. ; Bhattacharjee, K. ; Dash, J. K. ; Dev, B. N. (2009) Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces Applied Surface Science, 256 (2). pp. 361-364. ISSN 0169-4332
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01694...
Related URL: http://dx.doi.org/10.1016/j.apsusc.2009.05.008
Abstract
Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)Ag||(0 0 1)Si, [1 1 0]Ag||[1 1 0]Si, have been found to grow at substrate temperatures of ≥350°C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Ag Islands on Oxidized Si Surfaces; Reflection High Energy Electron Diffraction |
| ID Code: | 10138 |
| Deposited On: | 02 Nov 2010 10:52 |
| Last Modified: | 30 May 2011 05:38 |
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