Roy, Anupam ; Bhattacharjee, K. ; Lenka, H. P. ; Mahapatra, D. P. ; Dev, B. N. (2008) Surface roughness of ion-bombarded Si(1 0 0) surfaces: roughening and smoothing with the same roughness exponent Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266 (8). pp. 1276-1281. ISSN 0168-583X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...
Related URL: http://dx.doi.org/10.1016/j.nimb.2007.10.045
Abstract
We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the roughness of pristine as well as ion-bombarded Si(1 0 0) surfaces and of ultrathin Ge films deposited on them. One half of a Si(1 0 0) sample (with native oxide layer) was irradiated at room temperature using 45 keV Si- ions at a fluence of 4 × 1015 ions/cm2 while the other half was masked. STM measurements were then carried out on the unirradiated as well as the irradiated half of the sample. Root-mean-square (rms) roughness of both the halves of the sample has been measured as a function of STM scan size. Below a length scale of ~30 nm we observe surface smoothing and surface roughening is observed for length scales above this value. However, the surface is self-affine up to length scales of ~200 nm and the observed roughness exponent of 0.46 ± 0.04 is comparable to earlier cases of ion sputtering studies where only roughening [J. Krim, I. Heyvart, D.V. Haesendonck, Y. Bruynseraede, Phys. Rev. Lett. 70 (1993) 57] or only smoothing [D.K. Goswami, B.N. Dev, Phys. Rev. B 68 (2003) 033401] was observed. Preliminary results involving morphology for Ge deposition on clean ion-irradiated and pristine Si(1 0 0) surfaces are presented.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Ion-beam Induced Smoothing; Roughness Exponent; Scanning Tunneling Microscopy |
ID Code: | 10133 |
Deposited On: | 02 Nov 2010 10:49 |
Last Modified: | 30 May 2011 05:39 |
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