Goswami, D. K. ; Dev, B. N. (2003) Observation of smoothing and self-affine fractal roughness on MeV ion-irradiated Si surfaces Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 212 . pp. 253-257. ISSN 0168-583X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...
Related URL: http://dx.doi.org/10.1016/S0168-583X(03)01478-2
Abstract
Scanning tunneling microscopy (STM) was used to quantitatively investigate the fractal nature of MeV ion irradiated silicon surfaces. Si(1 0 0) surfaces (with native oxide) were irradiated at room temperature using 2 MeV Si+ ions with a fluence of 4 × 1015 ions/cm2. One half of the sample was masked during irradiation. Root-mean-square roughness of both the irradiated and the pristine halves of the sample has been measured as a function of STM scan size. Ion beam induced smoothing has been observed at length scales below ~50 nm. The roughness exponent of the smoothed surface is α =0.53±0.03. When the oxide is removed from the ion-bombarded surface by thermal flushing, the roughness exponent increases to 0.81±0.04 with further smoothing below the length scale ~50 nm and roughening at higher length scales upto ~300 nm. The values of the roughness exponents indicate the self-affine nature of these surfaces.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Ion-beam Induced Surface Smoothing; Scaling; Scanning Tunneling Microscopy |
ID Code: | 10123 |
Deposited On: | 02 Nov 2010 10:33 |
Last Modified: | 30 May 2011 05:49 |
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