Epitaxial growth of silver on br-passivated si(111) substrates under high vacuum

Abstract

Ag thin films (~125 nm) were deposited on Br-passivated vicinal (4° miscut) Si(111) surfaces at room temperature under high vacuum conditions. The films have been characterized by Rutherford backscattering spectrometry (RBS) and channeling, X-ray diffraction and transmission electron microscopy and diffraction measurements. The [111] axis of the Ag epilayer is tilted from the substrate [111] orientation by 0.4° towards the substrate surface normal. The films are grainy with a mosaic spread of 0.74°. The crystal quality of the Ag layer improves and the mosaic spread decreases to 0.37° upon annealing in high vacuum at higher temperatures (400 and 500°C) as observed from RBS/channeling and high resolution X-ray diffraction measurements. The tilt angle of the Ag[111] axis and the layer strain also decrease to some extent upon annealing at 500°C.