Items where Author is "Hudait, M. K."

Article

Hudait, M. K. ; Krupanidhi, S. B. (2001) Doping dependence of the barrier height and ideality factor of Au/n-GaAs schottky diodes at low temperatures Physica B: Condensed Matter, 307 (1-4). pp. 125-137. ISSN 0921-4526

Hudait, M. K. ; Krupanidhi, S. B. (2001) Interface states density distribution in Au/n-GaAs schottky diodes on n-Ge and n-GaAs substrates Materials Science and Engineering B, 87 (2). pp. 141-147. ISSN 0921-5107

Hudait, M. K. ; Venkateswarlu, P. ; Krupanidhi, S. B. (2001) Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures Solid-State Electronics, 45 (1). pp. 133-141. ISSN 0038-1101

Hudait, M. K. ; Krupanidhi, S. B. (2001) Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy Journal of Applied Physics, 89 (11). pp. 5972-5979. ISSN 0021-8979

Hudait, M. K. ; Krupanidhi, S. B. (1999) Breakdown characteristics of MOVPE grown Si-doped GaAs schottky diodes Solid-State Electronics, 43 (12). pp. 2135-2139. ISSN 0038-1101

Hudait, M. K. ; Modak, P. ; Krupanidhi, S. B. (1999) Si incorporation and Burstein-Moss shift in n-type GaAs Materials Science and Engineering B, 60 (1). pp. 1-11. ISSN 0921-5107

Hardikar, S. ; Hudait, M. K. ; Modak, P. ; Krupanidhi, S. B. ; Padha, N. (1999) Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures Applied Physics A: Materials Science & Processing, 68 (1). pp. 49-55. ISSN 0947-8396

Hudait, M. K. ; Modak, P. ; Rao, K. S. R. K. ; Krupanidhi, S. B. (1998) Low temperature photoluminescence properties of Zn-doped GaAs Materials Science and Engineering B, 57 (1). pp. 62-70. ISSN 0921-5107

Hudait, M. K. ; Modak, P. ; Hardikar, S. ; Rao, K. S. R. K. ; Krupanidhi, S. B. (1998) Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates Materials Science and Engineering B, 55 (1-2). pp. 53-67. ISSN 0921-5107

Hudait, M. K. ; Modak, P. ; Hardikar, S. ; Krupanidhi, S. B. (1998) Photoluminescence studies on Si-doped GaAs/Ge Journal of Applied Physics, 83 (8). pp. 4454-4461. ISSN 0021-8979