Bhatia, K. L. ; Parthasarathy, G. ; Gopal, E. S. R. (1985) Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bix using high pressure technique Bulletin of Materials Science, 7 (5). pp. 423-426. ISSN 0250-4707
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Official URL: http://www.ias.ac.in/j_archive/bms/7/2/423-426/vie...
Related URL: http://dx.doi.org/10.1007/BF02744053
Abstract
The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−x Bix (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Amorphous Semiconductors; Pressure Induced Effects; Chalcogenide Glasses; Doping of Chalcogenide Glasses |
| ID Code: | 97723 |
| Deposited On: | 22 Aug 2013 11:55 |
| Last Modified: | 19 May 2016 09:50 |
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