Γ and X bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

People, R. ; Jayaraman, A. ; Wecht, K. W. ; Alexander, S. K. ; Cho, A. Y. ; Sivco, D. L. (1988) Γ and X bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001) Pramana - Journal of Physics, 31 (5). pp. 383-387. ISSN 0304-4289

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Official URL: http://www.ias.ac.in/j_archive/pramana/31/5/383-38...

Related URL: http://dx.doi.org/10.1007/BF02845896

Abstract

The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain (Ξd+1/3Ξu−a)as−(6⋅92+0⋅3)eV and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓX), of 4.1×10−3 is deduced.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Hydrostatic Deformation Potentials; Bandgap; Pressure Dependence; 62.50; 78.55; 71.25
ID Code:96088
Deposited On:04 Dec 2012 09:56
Last Modified:19 May 2016 08:37

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