People, R. ; Jayaraman, A. ; Wecht, K. W. ; Sivco, D. L. ; Cho, A. Y. (1988) Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission Applied Physics Letters, 52 (25). pp. 2124-2126. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v52/i25/p2124...
Related URL: http://dx.doi.org/10.1063/1.99554
Abstract
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ‐band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P≳10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu−a) =−(7.79±0.4)eV, for the Γ‐band gap.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 96079 |
| Deposited On: | 04 Dec 2012 10:16 |
| Last Modified: | 04 Dec 2012 10:16 |
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