Pressure dependence of the Raman-active modes in Bi4Ti3O12

Kourouklis, G. A. ; Jayaraman, A. ; Van Uitert, L. G. (1987) Pressure dependence of the Raman-active modes in Bi4Ti3O12 Materials Letters, 5 (3). pp. 116-119. ISSN 0167-577X

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Bismuth titanate (Bi4Ti3O12), a layer-type ferroelectric material crystallizing in the monoclinic system, has been investigated by high-pressure Raman technique up to 17 GPa in a diamond anvil cell. A pressure-induced phase transition occurs near 3 GPa, and the softening of the lowest Raman mode near 31 cm−1 seems to be associated with this transition. Furthermore, the Raman data as well as absorption measurements indicate that a second phase transition occurs near 11 GPa. This transition may be due to a change from the ferroelectric to the paraelectric phase under the influence of pressure.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:96075
Deposited On:04 Dec 2012 10:20
Last Modified:04 Dec 2012 10:20

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