Kourouklis, G. A. ; Jayaraman, A. ; Van Uitert, L. G. (1987) Pressure dependence of the Raman-active modes in Bi4Ti3O12 Materials Letters, 5 (3). pp. 116-119. ISSN 0167-577X
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0167-577X(87)90087-5
Abstract
Bismuth titanate (Bi4Ti3O12), a layer-type ferroelectric material crystallizing in the monoclinic system, has been investigated by high-pressure Raman technique up to 17 GPa in a diamond anvil cell. A pressure-induced phase transition occurs near 3 GPa, and the softening of the lowest Raman mode near 31 cm−1 seems to be associated with this transition. Furthermore, the Raman data as well as absorption measurements indicate that a second phase transition occurs near 11 GPa. This transition may be due to a change from the ferroelectric to the paraelectric phase under the influence of pressure.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 96075 |
| Deposited On: | 04 Dec 2012 10:20 |
| Last Modified: | 04 Dec 2012 10:20 |
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