Lifshitz, N. ; Jayaraman, A. ; Logan, R. ; Maines, R. (1979) Pressure coefficient of the direct band gap of AlxGa1-xAs from optical absorption measurements Physical Review B, 20 (6). pp. 2398-2400. ISSN 0163-1829
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Official URL: http://prb.aps.org/abstract/PRB/v20/i6/p2398_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.20.2398
Abstract
The shift with hydrostatic pressure of the absorption edge in AlxGa1-xAs compound semiconductors has been measured. The pressure coefficient of the direct-conduction-band minima dEgΓ/dP was obtained as a function of composition in the range x=0 to 0.5. The pressure coefficient, when plotted againt the compositional parameter x, is found to increase up to x=0.25 and then to decrease nonlinearly.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 96015 |
| Deposited On: | 30 Nov 2012 06:56 |
| Last Modified: | 30 Nov 2012 06:56 |
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