Pressure-induced compensation in n-type AgInSe2

Jayaraman, A. ; Tell, B. ; Maines, R. G. (1978) Pressure-induced compensation in n-type AgInSe2 Applied Physics Letters, 32 (1). p. 21. ISSN 0003-6951

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The pressure dependence of resisitivity of n‐type AgInSe2 has been investigated up to 40 kbar hydrostatic pressure. The resisitivity shows a slight increase with pressure up to 26 kbar but exhibits a phenomenal time‐dependent rise in the region between 28 and 32 kbar. The sample resisitivity rises by a factor of 2×106 before saturating. We believe that this effect is due to the formation of compensating defect centers in the crystal, prior to the sluggish transformation from the chalcopyrite to the NaCl‐type structure.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:High-Pressure and Shock Wave Effects in Solids and Liquids; Other Crystalline Inorganic Semiconductors; Low-Field Transport and Mobility; Piezoresistance
ID Code:96008
Deposited On:30 Nov 2012 07:03
Last Modified:30 Nov 2012 07:03

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